Resistive switching properties in polycrystalline LiNbO3 thin films
LiNbO _3 (LNO) is currently intensively studied as an important ferroelectric material. In this work, polycrystalline LNO films were prepared through a sputtering technique, and their ferroelectricity-related resistive switching property was investigated using a device structure of PtSi/SiO _2 /LNO/...
Gorde:
| Egile Nagusiak: | , , , , , , , |
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| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
IOP Publishing
2024-01-01
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| Saila: | Applied Physics Express |
| Gaiak: | |
| Sarrera elektronikoa: | https://doi.org/10.35848/1882-0786/ad3f6d |
| Etiketak: |
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