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Lossless Phonon Transition Through GaN‐Diamond and Si‐Diamond Interfaces

Abstract Advancing Silicon (Si) technology beyond Moore's law through 3D architectures requires highly efficient heat management methods compatible with foundry processes. While continued increases in transistor density can be achieved through 3D architectures, self‐heating in the upper tiers degrad...

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Автори: Mohamadali Malakoutian, Kelly Woo, Dennis Rich, Ramandeep Mandia, Xiang Zheng, Anna Kasperovich, Devansh Saraswat, Rohith Soman, Youhwan Jo, Thomas Pfeifer, Taesoon Hwang, Henry Aller, Jeongkyu Kim, Junrui Lyu, Janelle Keionna Mabrey, Thomas Andres Rodriguez, James Pomeroy, Patrick E. Hopkins, Samuel Graham, David J. Smith, Subhasish Mitra, Kyeongjae Cho, Martin Kuball, Srabanti Chowdhury
Формат: Artigo
Мова:Inglês
Опубліковано: Wiley-VCH 2025-01-01
Серія:Advanced Electronic Materials
Предмети:
diamond
interface engineering
Moore's law
thermal boundary resistance
thermal management
ultra‐wide‐bandgap
Онлайн доступ:https://doi.org/10.1002/aelm.202400146
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