Enhanced etching of GaN with N2 gas addition during CVD diamond growth
Diamond on GaN materials processing is not straight-forward, as GaN is susceptible to a quasi-pure hydrogen CVD plasma etching. 1%, 3% and 5% N2 gas was gradually added to the H2 gas with fixed 6% CH4 in the recipe to promote the growth of diamond nanocrystals. Different types of microstructures wer...
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| Glavni autori: | , , , , , |
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| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
Taylor & Francis Group
2024-12-01
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| Serija: | Functional Diamond |
| Teme: | |
| Online pristup: | http://dx.doi.org/10.1080/26941112.2024.2393817 |
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