Enhanced etching of GaN with N2 gas addition during CVD diamond growth

Diamond on GaN materials processing is not straight-forward, as GaN is susceptible to a quasi-pure hydrogen CVD plasma etching. 1%, 3% and 5% N2 gas was gradually added to the H2 gas with fixed 6% CH4 in the recipe to promote the growth of diamond nanocrystals. Different types of microstructures wer...

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Hlavní autoři:	Awadesh Kumar Mallik, Giridharan Krishnamurthy, Wen-Ching Shih, Paulius Pobedinskas, Jan D’Haen, Ken Haenen
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	Taylor & Francis Group 2024-12-01
Edice:	Functional Diamond
Témata:	cvd etching diamond gan microstructure properties
On-line přístup:	http://dx.doi.org/10.1080/26941112.2024.2393817
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