Integration of 150 nm gate length N-polar GaN MIS-HEMT devices with all-around diamond for device-level cooling
We report the successful integration of low-temperature polycrystalline all-around diamond as heat spreaders with 150 nm gate length N-polar GaN MISHEMT platform to improve power efficiencies for X-band applications. With an all-around integration scheme, the CVD-grown diamond reduces channel’s peak...
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| Principais autores: | , , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
IOP Publishing
2025-01-01
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| Series: | Applied Physics Express |
| Assuntos: | |
| Acceso en liña: | https://doi.org/10.35848/1882-0786/adcb87 |
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