Influences of Nonaqueous Slurry Components on Polishing 4H-SiC Substrate with a Fixed Abrasive Pad
4H-SiC wafers are more likely to sustain a lower material removal rate (MRR) and severe subsurface damage in conventional chemical mechanical polishing (CMP) methods. To overcome the material removal bottleneck imposed by aqueous chemistry, a high-efficiency polishing of 4H-SiC wafers method by appl...
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| Автори: | , , , , , , |
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| Формат: | Artigo |
| Мова: | Inglês |
| Опубліковано: |
MDPI AG
2023-05-01
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| Серія: | Crystals |
| Предмети: | |
| Онлайн доступ: | https://www.mdpi.com/2073-4352/13/6/869 |
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