Influences of Nonaqueous Slurry Components on Polishing 4H-SiC Substrate with a Fixed Abrasive Pad

4H-SiC wafers are more likely to sustain a lower material removal rate (MRR) and severe subsurface damage in conventional chemical mechanical polishing (CMP) methods. To overcome the material removal bottleneck imposed by aqueous chemistry, a high-efficiency polishing of 4H-SiC wafers method by appl...

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Главные авторы:	Jiyuan Zhong, Jiapeng Chen, Hanqiang Wang, Haibo Chen, Yunyun Gu, Juanfen Shen, Tao Sun
Формат:	Artigo
Язык:	Inglês
Опубликовано:	MDPI AG 2023-05-01
Серии:	Crystals
Предметы:	silicon carbide (SiC) nonaqueous slurry methanol H<sub>2</sub>O<sub>2</sub> oxidizer chemical mechanical polishing fixed abrasive pad
Online-ссылка:	https://www.mdpi.com/2073-4352/13/6/869
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