Recent progress on highly efficient and long-lifetime AlGaN-based light-emitting diodes

The impact of heterostructure variations on the AlGaN-based ultraviolet-C light-emitting diodes (UVC-LEDs) device performance and secondary ion mass spectrometry (SIMS) profiles were studied. To improve the crystalline quality of the p -layer adjacent to the active region based on H-atom behavior fr...

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Autori principali:	Yoshiki Saito, Atsushi Miyazaki, Shinya Boyama, Koji Okuno, Hisanori Ishiguro, Tetsuya Takeuchi, Kohei Shima, Shigefusa F. Chichibu
Natura:	Artigo
Lingua:	Inglês
Pubblicazione:	IOP Publishing 2025-01-01
Serie:	Applied Physics Express
Soggetti:	device lifetime deep ultraviolet AlGaN base LED
Accesso online:	https://doi.org/10.35848/1882-0786/ae09ee
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