Recent progress on highly efficient and long-lifetime AlGaN-based light-emitting diodes
The impact of heterostructure variations on the AlGaN-based ultraviolet-C light-emitting diodes (UVC-LEDs) device performance and secondary ion mass spectrometry (SIMS) profiles were studied. To improve the crystalline quality of the p -layer adjacent to the active region based on H-atom behavior fr...
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| Principais autores: | , , , , , , , |
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| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
IOP Publishing
2025-01-01
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| Serier: | Applied Physics Express |
| Fag: | |
| Online adgang: | https://doi.org/10.35848/1882-0786/ae09ee |
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