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Recent progress on highly efficient and long-lifetime AlGaN-based light-emitting diodes

The impact of heterostructure variations on the AlGaN-based ultraviolet-C light-emitting diodes (UVC-LEDs) device performance and secondary ion mass spectrometry (SIMS) profiles were studied. To improve the crystalline quality of the p -layer adjacent to the active region based on H-atom behavior fr...

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Bibliografiske detaljer
Principais autores: Yoshiki Saito, Atsushi Miyazaki, Shinya Boyama, Koji Okuno, Hisanori Ishiguro, Tetsuya Takeuchi, Kohei Shima, Shigefusa F. Chichibu
Format: Artigo
Sprog:Inglês
Udgivet: IOP Publishing 2025-01-01
Serier:Applied Physics Express
Fag:
Online adgang:https://doi.org/10.35848/1882-0786/ae09ee
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