Charge carrier transport properties in layer structured hexagonal boron nitride
Due to its large in-plane thermal conductivity, high temperature and chemical stability, large energy band gap (˜ 6.4 eV), hexagonal boron nitride (hBN) has emerged as an important material for applications in deep ultraviolet photonic devices. Among the members of the III-nitride material system, h...
Furkejuvvon:
| Váldodahkkit: | , , , |
|---|---|
| Materiálatiipa: | Artigo |
| Giella: | Inglês |
| Almmustuhtton: |
AIP Publishing LLC
2014-10-01
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| Ráidu: | AIP Advances |
| Liŋkkat: | http://dx.doi.org/10.1063/1.4898630 |
| Fáddágilkorat: |
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