Fundamental optical transitions in hexagonal boron nitride epilayers
Fundamental optical transitions in hexagonal boron nitride (h-BN) epilayers grown on sapphire by metal–organic chemical vapor deposition (MOCVD) using triethylboron as the boron precursor have been probed by photoluminescence (PL) emission spectroscopy. The low temperature (10 K) PL spectrum exhibit...
Gorde:
| Egile Nagusiak: | , , |
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| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
AIP Publishing LLC
2024-11-01
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| Saila: | APL Materials |
| Sarrera elektronikoa: | http://dx.doi.org/10.1063/5.0234673 |
| Etiketak: |
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