Optical properties of Zr-doped AlN epilayers
Aluminum nitride (AlN) doped with zirconium (Zr), AlN:Zr, an ultrawide bandgap semiconductor, has been theoretically predicted as a promising material for quantum information systems, piezoelectric applications, and photoconductive semiconductor switches. We report on the optical characterization of...
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| Główni autorzy: | , , , , |
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| Format: | Artigo |
| Język: | Inglês |
| Wydane: |
AIP Publishing LLC
2025-07-01
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| Seria: | APL Materials |
| Dostęp online: | http://dx.doi.org/10.1063/5.0277907 |
| Etykiety: |
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