Solution-Processed Silicon Doped Tin Oxide Thin Films and Thin-Film Transistors Based on Tetraethyl Orthosilicate
Recently, tin oxide (SnO<sub>2</sub>) has been the preferred thin film material for semiconductor devices such as thin-film transistors (TFTs) due to its low cost, non-toxicity, and superior electrical performance. However, the high oxygen vacancy (V<sub>O</sub>) concentration leads to poor performa...
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| Autori principali: | , , , , , , , , , |
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| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
MDPI AG
2022-06-01
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| Serie: | Membranes |
| Soggetti: | |
| Accesso online: | https://www.mdpi.com/2077-0375/12/6/590 |
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