Solution-Processed Silicon Doped Tin Oxide Thin Films and Thin-Film Transistors Based on Tetraethyl Orthosilicate
Recently, tin oxide (SnO<sub>2</sub>) has been the preferred thin film material for semiconductor devices such as thin-film transistors (TFTs) due to its low cost, non-toxicity, and superior electrical performance. However, the high oxygen vacancy (V<sub>O</sub>) concentration leads to poor performa...
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| Egile Nagusiak: | , , , , , , , , , |
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| Formatua: | Artigo |
| Hizkuntza: | Inglês |
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MDPI AG
2022-06-01
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| Saila: | Membranes |
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| Sarrera elektronikoa: | https://www.mdpi.com/2077-0375/12/6/590 |
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