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Photo-Induced Room-Temperature Gas Sensing with a-IGZO Based Thin-Film Transistors Fabricated on Flexible Plastic Foil

We present a gas sensitive thin-film transistor (TFT) based on an amorphous Indium–Gallium–Zinc–Oxide (a-IGZO) semiconductor as the sensing layer, which is fabricated on a free-standing flexible polyimide foil. The photo-induced sensor response to NO2 gas at room temperature and the cross-sensitivit...

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Автори: Stefan Knobelspies, Benedikt Bierer, Alwin Daus, Alain Takabayashi, Giovanni Antonio Salvatore, Giuseppe Cantarella, Alvaro Ortiz Perez, Jürgen Wöllenstein, Stefan Palzer, Gerhard Tröster
Формат: Artigo
Мова:Inglês
Опубліковано: MDPI AG 2018-01-01
Серія:Sensors
Предмети:
a-IGZO
gas sensor
flexible electronics
thin-film transistor
NO2
Онлайн доступ:http://www.mdpi.com/1424-8220/18/2/358
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