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Plasma-Enhanced Atomic Layer Deposition of AlF<sub>3</sub> Antireflective Coatings via Pulse-Time Control of Fluorine Radical Reactions

Plasma-enhanced atomic layer deposition (PEALD) is used to grow high-quality aluminum fluoride (AlF<sub>3</sub>) antireflective coatings via a safe, HF-free route using trimethylaluminum and SF<sub>6</sub> plasma. In situ diagnostics reveal a reaction pathway mediated by a hydrogen-terminated fluori...

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Autores principales: Jing Zhang, Zhixuan Zhang, Chia-Hsun Hsu, Peng Gao, Yu Qiu, Yuqi Lin, Shui-Yang Lien
Formato: Artigo
Lenguaje:Inglês
Publicado: MDPI AG 2025-12-01
Colección:Nanomaterials
Materias:
aluminum fluoride
plasma enhanced atomic layer deposition
antireflective
optical electronics
Acceso en línea:https://www.mdpi.com/2079-4991/16/1/43
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