Self‐Aligned Contact Doping for Performance Enhancement of Low‐Leakage Carbon Nanotube Field Effect Transistors

Abstract Carbon nanotube (CNT) field effect transistors (CNFETs) show promise for the next generation VLSI systems due to their excellent scalability, energy efficiency, and speed. However, high leakage current is a drawback of large diameter CNTs (diameter (DCNT) ≥ 1.4 nm) due to the small electron...

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Huvudupphov:	Hsin‐Yuan Chiu, Tzu‐Ang Chao, Nathaniel S. Safron, Sheng‐Kai Su, San‐Lin Liew, Wei‐Sheng Yun, Po‐Sen Mao, Yu‐Tung Lin, Vincent Duen‐Huei Hou, Tung‐Ying Lee, Wen‐Hao Chang, Matthias Passlack, Hon‐Sum Philip Wong, Iuliana P. Radu, Han Wang, Gregory Pitner, Chao‐Hsin Chien
Materialtyp:	Artigo
Språk:	Inglês
Utgiven:	Wiley-VCH 2024-03-01
Serie:	Advanced Electronic Materials
Ämnen:	carbon nanotube contact resistance doping, leakage low‐dimensional materials MoO3
Länkar:	https://doi.org/10.1002/aelm.202300519
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