Proposing Very Low Power Three-Valued Flip-Flops by Using CNTFET Transistors
The scaling limitations of Complementary Metal-Oxide-Semiconductor (CMOS) transistors to achieve better performance have led to the attention of other structures to improve circuit performance. One of these structures is multi-valued circuits. In this paper, we will first study Carbon Nanotube Trans...
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| Главные авторы: | , , |
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| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
Iran University of Science and Technology
2024-03-01
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| Серии: | Iranian Journal of Electrical and Electronic Engineering |
| Предметы: | |
| Online-ссылка: | http://ijeee.iust.ac.ir/article-1-3066-en.pdf |
| Метки: |
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