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Proposing Very Low Power Three-Valued Flip-Flops by Using CNTFET Transistors

The scaling limitations of Complementary Metal-Oxide-Semiconductor (CMOS) transistors to achieve better performance have led to the attention of other structures to improve circuit performance. One of these structures is multi-valued circuits. In this paper, we will first study Carbon Nanotube Trans...

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Principais autores: Amirhossein Salimi, Behzad Ebrahimi, Massoud Dousti
Formato: Artigo
Idioma:Inglês
Publicado: Iran University of Science and Technology 2024-03-01
Series:Iranian Journal of Electrical and Electronic Engineering
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Acceso en liña:http://ijeee.iust.ac.ir/article-1-3066-en.pdf
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