Incorporation of Resistive Random Access Memory into Low‐Temperature Polysilicon Transistor with Fin‐Like Structure as 1T1R Device

Abstract In this study, a one transistor one resistor (1T1R) structure combining a fin‐like low‐temperature polycrystalline‐silicon (LTPS) transistor and a resistive random access memory (RRAM) is successfully fabricated. For the fin‐like LTPS transistor, both n‐type and p‐types show excellent elect...

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Autors principals:	Wei‐Chen Huang, Hao‐Xuan Zheng, Po‐Hsun Chen, Ting‐Chang Chang, Yung‐Fang Tan, Shih‐Kai Lin, Yong‐Ci Zhang, Fu‐Yuan Jin, Chung‐Wei Wu, Yu‐Hsuan Yeh, Sheng‐Yao Chou, Hui‐Chun Huang, Yan‐Wen Chen, Simon M. Sze
Format:	Artigo
Idioma:	Inglês
Publicat:	Wiley-VCH 2020-06-01
Col·lecció:	Advanced Electronic Materials
Matèries:	fabrication fin‐like low‐temperature polysilicon (LTPS) one transistor one resistor (1T1R) resistive random access memory (RRAM)
Accés en línia:	https://doi.org/10.1002/aelm.202000066
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