An Investigation of Reliability and Life Time Prediction for Power MOSFET Using Electronically and Statistical Technique
This work is aimed to estimate the life time of the MOSFET power transistor through an empirical implementation work merged with statistical applications. In the empirical part the MOSFET power transistors are subjected to high frequency(50kHz) via an electronically controlled model using advanced d...
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| Автори: | , , |
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| Формат: | Artigo |
| Мова: | Inglês |
| Опубліковано: |
Unviversity of Technology- Iraq
2013-04-01
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| Серія: | Engineering and Technology Journal |
| Предмети: | |
| Онлайн доступ: | https://etj.uotechnology.edu.iq/article_84170_3e35b4b98cb472a0c12624f08363665c.pdf |
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