Effect of post-deposition treatment on electrical properties of solution-processed a-IGZO Schottky diodes
The fabrication of solution-processed electronic devices based on amorphous In–Ga–Zn–O (a-IGZO) requires high-temperature post-deposition annealing to activate IGZO layers and minimize impurities. Deep-ultraviolet (DUV) treatment can reduce the post-deposition annealing temperature when manufacturin...
Uloženo v:
| Hlavní autoři: | , , , , , , , |
|---|---|
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
AIP Publishing LLC
2020-07-01
|
| Edice: | AIP Advances |
| On-line přístup: | http://dx.doi.org/10.1063/5.0005970 |
| Tagy: |
Žádné tagy, Buďte první, kdo vytvoří štítek k tomuto záznamu!
|