Effect of post-deposition treatment on electrical properties of solution-processed a-IGZO Schottky diodes

The fabrication of solution-processed electronic devices based on amorphous In–Ga–Zn–O (a-IGZO) requires high-temperature post-deposition annealing to activate IGZO layers and minimize impurities. Deep-ultraviolet (DUV) treatment can reduce the post-deposition annealing temperature when manufacturin...

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Autores principales:	Veronika Ulianova, Yurii Didenko, Sami Bolat, Galo Torres Sevilla, Dmytro Tatarchuk, Ivan Shorubalko, Evgeniia Gilshtein, Yaroslav E. Romanyuk
Formato:	Artigo
Lenguaje:	Inglês
Publicado:	AIP Publishing LLC 2020-07-01
Colección:	AIP Advances
Acceso en línea:	http://dx.doi.org/10.1063/5.0005970
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