Effect of post-deposition treatment on electrical properties of solution-processed a-IGZO Schottky diodes
The fabrication of solution-processed electronic devices based on amorphous In–Ga–Zn–O (a-IGZO) requires high-temperature post-deposition annealing to activate IGZO layers and minimize impurities. Deep-ultraviolet (DUV) treatment can reduce the post-deposition annealing temperature when manufacturin...
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| Autors principals: | , , , , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
AIP Publishing LLC
2020-07-01
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| Col·lecció: | AIP Advances |
| Accés en línia: | http://dx.doi.org/10.1063/5.0005970 |
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