Improved DC and RF Characteristics of GaN HEMT Using a Back-Barrier and Locally Doped Barrier Layer
To enhance the DC and RF performance of AlGaN/GaN HEMTs, a novel device structure was proposed and investigated through simulation. The key innovation of this new structure lies in the incorporation of an Al<sub>0.7</sub>In<sub>0.15</sub>Ga<sub>0.15</sub>N back-barrier layer and an N-type locally do...
Bewaard in:
| Hoofdauteurs: | , , , , |
|---|---|
| Formaat: | Artigo |
| Taal: | Inglês |
| Gepubliceerd in: |
MDPI AG
2025-06-01
|
| Reeks: | Micromachines |
| Onderwerpen: | |
| Online toegang: | https://www.mdpi.com/2072-666X/16/7/779 |
| Tags: |
Geen labels, Wees de eerste die dit record labelt!
|