Improved DC and RF Characteristics of GaN HEMT Using a Back-Barrier and Locally Doped Barrier Layer
To enhance the DC and RF performance of AlGaN/GaN HEMTs, a novel device structure was proposed and investigated through simulation. The key innovation of this new structure lies in the incorporation of an Al<sub>0.7</sub>In<sub>0.15</sub>Ga<sub>0.15</sub>N back-barrier layer and an N-type locally do...
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| Auteurs principaux: | , , , , |
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| Format: | Artigo |
| Langue: | Inglês |
| Publié: |
MDPI AG
2025-06-01
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| Collection: | Micromachines |
| Sujets: | |
| Accès en ligne: | https://www.mdpi.com/2072-666X/16/7/779 |
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