Interplay Effect of Excitation and Temperature on Carrier Transfer between Vertically Aligned InAs/GaAs Quantum Dot Pairs

Carrier transfer in vertically-coupled InAs/GaAs quantum dot (QD) pairs is investigated. Photoluminescence (PL) and PL excitation spectra measured at low temperature indicate that the PL peak intensity ratio between the emission from the two sets of QDs—i.e., the relative population of carriers betw...

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Detalles Bibliográficos

Principais autores:	Yao Liu, Ying Wang, Baolai Liang, Qinglin Guo, Shufang Wang, Guangsheng Fu, Yuriy I. Mazur, Morgan E. Ware, Gregory J. Salamo
Formato:	Artigo
Idioma:	Inglês
Publicado:	MDPI AG 2016-11-01
Series:	Crystals
Assuntos:	photoluminescence self-assembled quantum dots carrier transfer semiconductor
Acceso en liña:	http://www.mdpi.com/2073-4352/6/11/144
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