Optical Characterization of the Interplay Between Carrier Localization and Carrier Injection in Self-Assembled GaSb/GaAs Quantum Dots
The optical properties of a heterostructure containing GaSb/GaAs quantum dots (QDs) have been systematically investigated via photoluminescence (PL) measurements to gain insights into carrier dynamics. The QD and wetting layer (WL) emissions exhibit a complementary dependence on the excitation inten...
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| Autors principals: | , , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI AG
2025-07-01
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| Col·lecció: | Optics |
| Matèries: | |
| Accés en línia: | https://www.mdpi.com/2673-3269/6/3/33 |
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