Optical Characterization of the Interplay Between Carrier Localization and Carrier Injection in Self-Assembled GaSb/GaAs Quantum Dots

The optical properties of a heterostructure containing GaSb/GaAs quantum dots (QDs) have been systematically investigated via photoluminescence (PL) measurements to gain insights into carrier dynamics. The QD and wetting layer (WL) emissions exhibit a complementary dependence on the excitation inten...

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Autors principals:	Si-Yuan Ma, Ying Wang, Yuriy I. Mazur, Morgan E. Ware, Gregory J. Salamo, Bao Lai Liang
Format:	Artigo
Idioma:	Inglês
Publicat:	MDPI AG 2025-07-01
Col·lecció:	Optics
Matèries:	quantum dot type-II band alignment carrier dynamics photoluminescence lifetime
Accés en línia:	https://www.mdpi.com/2673-3269/6/3/33
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