Reduction of Dark Current in CMOS Image Sensor Pixels Using Hydrocarbon-Molecular-Ion-Implanted Double Epitaxial Si Wafers
The impact of hydrocarbon-molecular (C<sub>3</sub>H<sub>6</sub>)-ion implantation in an epitaxial layer, which has low oxygen concentration, on the dark characteristics of complementary metal-oxide-semiconductor (CMOS) image sensor pixels was investigated by dark current spectroscopy. It was demonst...
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| Glavni autori: | , , , , , , , |
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| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
MDPI AG
2020-11-01
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| Serija: | Sensors |
| Teme: | |
| Online pristup: | https://www.mdpi.com/1424-8220/20/22/6620 |
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