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Reduction of Dark Current in CMOS Image Sensor Pixels Using Hydrocarbon-Molecular-Ion-Implanted Double Epitaxial Si Wafers

The impact of hydrocarbon-molecular (C<sub>3</sub>H<sub>6</sub>)-ion implantation in an epitaxial layer, which has low oxygen concentration, on the dark characteristics of complementary metal-oxide-semiconductor (CMOS) image sensor pixels was investigated by dark current spectroscopy. It was demonst...

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Principais autores: Ayumi Onaka-Masada, Takeshi Kadono, Ryosuke Okuyama, Ryo Hirose, Koji Kobayashi, Akihiro Suzuki, Yoshihiro Koga, Kazunari Kurita
פורמט: Artigo
שפה:Inglês
יצא לאור: MDPI AG 2020-11-01
סדרה:Sensors
נושאים:
CMOS image sensor
gettering
white spot defects
oxygen
גישה מקוונת:https://www.mdpi.com/1424-8220/20/22/6620
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