Photo-driven fin field-effect transistors
The integration between infrared detection and modern microelectronics offers unique opportunities for compact and high-resolution infrared imaging. However, silicon, the cornerstone of modern microelectronics, can only detect light within a limited wavelength range (< 1100 nm) due to its bandgap of...
Na minha lista:
| Principais autores: | , , , , , , |
|---|---|
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Editorial Office of Opto-Electronic Journals, Institute of Optics and Electronics, CAS, China
2024-05-01
|
| coleção: | Opto-Electronic Science |
| Assuntos: | |
| Acesso em linha: | https://www.oejournal.org/article/doi/10.29026/oes.2024.230046 |
| Tags: |
Sem tags, seja o primeiro a adicionar uma tag!
|