Photo-driven fin field-effect transistors
The integration between infrared detection and modern microelectronics offers unique opportunities for compact and high-resolution infrared imaging. However, silicon, the cornerstone of modern microelectronics, can only detect light within a limited wavelength range (< 1100 nm) due to its bandgap of...
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| Principais autores: | , , , , , , |
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| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
Editorial Office of Opto-Electronic Journals, Institute of Optics and Electronics, CAS, China
2024-05-01
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| Serier: | Opto-Electronic Science |
| Fag: | |
| Online adgang: | https://www.oejournal.org/article/doi/10.29026/oes.2024.230046 |
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