MoS₂ Transistors with Low Schottky Barrier Contact by Optimizing the Interfacial Layer Thickness

Molybdenum disulfide (MoS₂) has attracted great attention from researchers because of its large band gap, good mechanical toughness and stable physical properties; it has become the ideal material for the next-generation optoelectronic devices. However, the large Schottky barrier height (...

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Hlavní autoři:	Jinbing Cheng, Junbao He, Chunying Pu, Congbin Liu, Xiaoyu Huang, Deyang Zhang, Hailong Yan, Paul K. Chu
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	MDPI AG 2022-08-01
Edice:	Energies
Témata:	MoS<sub>2</sub> TiO<sub>2</sub> Schottky barrier contact resistance
On-line přístup:	https://www.mdpi.com/1996-1073/15/17/6169
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