2T1C DRAM based on semiconducting MoS₂ and semimetallic graphene for in-memory computing

In-memory computing is an alternative method to effectively accelerate the massive data-computing tasks of artificial intelligence (AI) and break the memory wall. In this work, we propose a 2T1C DRAM structure for in-memory computing. It integrates a monolayer graphene transistor, a monolayer MoS<su...

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Hlavní autoři:	Gou Saifei, Wang Yin, Dong Xiangqi, Xu Zihan, Wang Xinyu, Sun Qicheng, Xie Yufeng, Zhou Peng, Bao Wenzhong
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	Science Press 2023-06-01
Edice:	National Science Open
Témata:	molybdenum disulfide (MoS<sub>2</sub>) graphene DRAM in-memory computing
On-line přístup:	https://www.sciengine.com/doi/10.1360/nso/20220071
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