Design and study of 3.3 kV SiC MOSFET drivers
This paper analyzes the electrical characteristics of 3.3 kV SiC MOSFET drivers and reviews the studies on existing SiC drivers. Furthermore, it presents a design scheme for high-voltage SiC drivers, and highlights the key differences between SiC drivers and traditional IGBT drivers. A 3.3 kV SiC MO...
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| Main Authors: | , , , , |
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| Format: | Artigo |
| Language: | Chinês |
| Published: |
Editorial Department of Electric Drive for Locomotives
2026-01-01
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| Series: | 机车电传动 |
| Subjects: | |
| Online Access: | http://edl.csrzic.com/thesisDetails#10.13890/j.issn.1000-128X.2026.01.018 |
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