High-Performance Non-Volatile InGaZnO Based Flash Memory Device Embedded with a Monolayer Au Nanoparticles

Non-volatile memory (NVM) devices based on three-terminal thin-film transistors (TFTs) have gained extensive interest in memory applications due to their high retained characteristics, good scalability, and high charge storage capacity. Herein, we report a low-temperature (<100 °C) processed top-gat...

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Bibliografische gegevens

Hoofdauteurs:	Muhammad Naqi, Nayoung Kwon, Sung Hyeon Jung, Pavan Pujar, Hae Won Cho, Yong In Cho, Hyung Koun Cho, Byungkwon Lim, Sunkook Kim
Formaat:	Artigo
Taal:	Inglês
Gepubliceerd in:	MDPI AG 2021-04-01
Reeks:	Nanomaterials
Onderwerpen:	non-volatile memory device flash memory device three-terminal memory device IGZO monolayer Au nanoparticles
Online toegang:	https://www.mdpi.com/2079-4991/11/5/1101
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