Compact Integration of Hydrogen–Resistant a–InGaZnO and Poly–Si Thin–Film Transistors

The low–temperature poly–Si oxide (LTPO) backplane is realized by monolithically integrating low–temperature poly–Si (LTPS) and amorphous oxide semiconductor (AOS) thin–film transistors (TFTs) in the same display backplane. The LTPO–enabled dynamic refreshing rate can significantly reduce the displa...

Celý popis

Podrobná bibliografie

Hlavní autoři:	Yunping Wang, Yuheng Zhou, Zhihe Xia, Wei Zhou, Meng Zhang, Fion Sze Yan Yeung, Man Wong, Hoi Sing Kwok, Shengdong Zhang, Lei Lu
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	MDPI AG 2022-05-01
Edice:	Micromachines
Témata:	low–temperature poly–Si oxide (LTPO) amorphous indium–gallium–zinc oxide (a–IGZO) thin–film transistors (TFT) diffusion barrier hydrogen–resistant nitrous oxide (N2O)
On-line přístup:	https://www.mdpi.com/2072-666X/13/6/839
Tagy:	Přidat tag Žádné tagy, Buďte první, kdo vytvoří štítek k tomuto záznamu!