Compact Integration of Hydrogen–Resistant a–InGaZnO and Poly–Si Thin–Film Transistors

The low–temperature poly–Si oxide (LTPO) backplane is realized by monolithically integrating low–temperature poly–Si (LTPS) and amorphous oxide semiconductor (AOS) thin–film transistors (TFTs) in the same display backplane. The LTPO–enabled dynamic refreshing rate can significantly reduce the displa...

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Autors principals:	Yunping Wang, Yuheng Zhou, Zhihe Xia, Wei Zhou, Meng Zhang, Fion Sze Yan Yeung, Man Wong, Hoi Sing Kwok, Shengdong Zhang, Lei Lu
Format:	Artigo
Idioma:	Inglês
Publicat:	MDPI AG 2022-05-01
Col·lecció:	Micromachines
Matèries:	low–temperature poly–Si oxide (LTPO) amorphous indium–gallium–zinc oxide (a–IGZO) thin–film transistors (TFT) diffusion barrier hydrogen–resistant nitrous oxide (N2O)
Accés en línia:	https://www.mdpi.com/2072-666X/13/6/839
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