Growth, Electronic and Electrical Characterization of Ge-Rich Ge–Sb–Te Alloy

In this study, we deposit a Ge-rich Ge–Sb–Te alloy by physical vapor deposition (PVD) in the amorphous phase on silicon substrates. We study in-situ, by X-ray and ultraviolet photoemission spectroscopies (XPS and UPS), the electronic properties and carefully ascertain the alloy composition to be GST...

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Váldodahkkit:	Adriano Díaz Fattorini, Caroline Chèze, Iñaki López García, Christian Petrucci, Marco Bertelli, Flavia Righi Riva, Simone Prili, Stefania M. S. Privitera, Marzia Buscema, Antonella Sciuto, Salvatore Di Franco, Giuseppe D’Arrigo, Massimo Longo, Sara De Simone, Valentina Mussi, Ernesto Placidi, Marie-Claire Cyrille, Nguyet-Phuong Tran, Raffaella Calarco, Fabrizio Arciprete
Materiálatiipa:	Artigo
Giella:	Inglês
Almmustuhtton:	MDPI AG 2022-04-01
Ráidu:	Nanomaterials
Fáttát:	PCM Ge-rich GST alloys Raman electronic properties
Liŋkkat:	https://www.mdpi.com/2079-4991/12/8/1340
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Growth, Electronic and Electrical Characterization of Ge-Rich Ge–Sb–Te Alloy

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