QR-koda

Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge Laser

The development of the low dislocation density of the Si-based GaAs buffer is considered the key technical route for realizing InAs/GaAs quantum dot lasers for photonic integrated circuits. To prepare the high-quality GaAs layer on the Si substrate, we employed an engineered Ge-buffer on Si, used th...

Olles dieđut

Furkejuvvon:
Váldodahkkit: Yong Du, Wenqi Wei, Buqing Xu, Guilei Wang, Ben Li, Yuanhao Miao, Xuewei Zhao, Zhenzhen Kong, Hongxiao Lin, Jiahan Yu, Jiale Su, Yan Dong, Wenwu Wang, Tianchun Ye, Jianjun Zhang, Henry H. Radamson
Materiálatiipa: Artigo
Giella:Inglês
Almmustuhtton: MDPI AG 2022-09-01
Ráidu:Micromachines
Fáttát:
Si photonics
InAs/GaAs
Quantum dots
III-V epitaxy
dislocation filter layers
defects
Liŋkkat:https://www.mdpi.com/2072-666X/13/10/1579
Fáddágilkorat: Lasit fáddágilkoriid
Eai fáddágilkorat, Lasit vuosttaš fáddágilkora!

Geahča maid