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Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge Laser

The development of the low dislocation density of the Si-based GaAs buffer is considered the key technical route for realizing InAs/GaAs quantum dot lasers for photonic integrated circuits. To prepare the high-quality GaAs layer on the Si substrate, we employed an engineered Ge-buffer on Si, used th...

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Main Authors: Yong Du, Wenqi Wei, Buqing Xu, Guilei Wang, Ben Li, Yuanhao Miao, Xuewei Zhao, Zhenzhen Kong, Hongxiao Lin, Jiahan Yu, Jiale Su, Yan Dong, Wenwu Wang, Tianchun Ye, Jianjun Zhang, Henry H. Radamson
Format: Artigo
Language:Inglês
Published: MDPI AG 2022-09-01
Series:Micromachines
Subjects:
Si photonics
InAs/GaAs
Quantum dots
III-V epitaxy
dislocation filter layers
defects
Online Access:https://www.mdpi.com/2072-666X/13/10/1579
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