Low specific contact resistance between InAs/Ni–InAs evaluated by multi-sidewall TLM
The specific contact resistance ρint of the InAs/Ni–InAs interface was evaluated by the multi-sidewall transmission line method (MSTLM), where Ni–InAs was formed by alloying Ni and InAs-on-insulator substrates. The revised test structure for MSTLM has been proposed, which can be easily fabricated. B...
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| Principais autores: | , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
AIP Publishing LLC
2023-05-01
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| Series: | AIP Advances |
| Acceso en liña: | http://dx.doi.org/10.1063/5.0150296 |
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