Comparative Study of IGBT and SiC MOSFET Three-Phase Inverter: Impact of Parasitic Capacitance on the Output Voltage Distortion
This study investigates the nonlinearities in three-phase inverters for SiC-based systems and compares their performance to IGBT-based systems. An analytical model of inverter voltage distortion is developed, which accounts not only for dead time (td), switching delay time, switching frequency (fs),...
Gespeichert in:
| Hauptverfasser: | , , , , |
|---|---|
| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
MDPI AG
2023-09-01
|
| Schriftenreihe: | Actuators |
| Schlagworte: | |
| Online-Zugang: | https://www.mdpi.com/2076-0825/12/9/355 |
| Tags: |
Keine Tags, Fügen Sie das erste Tag hinzu!
|
