QR-Code

Comparative Study of IGBT and SiC MOSFET Three-Phase Inverter: Impact of Parasitic Capacitance on the Output Voltage Distortion

This study investigates the nonlinearities in three-phase inverters for SiC-based systems and compares their performance to IGBT-based systems. An analytical model of inverter voltage distortion is developed, which accounts not only for dead time (td), switching delay time, switching frequency (fs),...

Ausführliche Beschreibung

Gespeichert in:
Bibliografische Detailangaben
Hauptverfasser: Paisak Poolphaka, Ehsan Jamshidpour, Thierry Lubin, Lotfi Baghli, Noureddine Takorabet
Format: Artigo
Sprache:Inglês
Veröffentlicht: MDPI AG 2023-09-01
Schriftenreihe:Actuators
Schlagworte:
Online-Zugang:https://www.mdpi.com/2076-0825/12/9/355
Tags: Tag hinzufügen
Keine Tags, Fügen Sie das erste Tag hinzu!