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Comparative Study of IGBT and SiC MOSFET Three-Phase Inverter: Impact of Parasitic Capacitance on the Output Voltage Distortion

This study investigates the nonlinearities in three-phase inverters for SiC-based systems and compares their performance to IGBT-based systems. An analytical model of inverter voltage distortion is developed, which accounts not only for dead time (td), switching delay time, switching frequency (fs),...

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-д хадгалсан:
Номзүйн дэлгэрэнгүй
Үндсэн зохиолчид: Paisak Poolphaka, Ehsan Jamshidpour, Thierry Lubin, Lotfi Baghli, Noureddine Takorabet
Формат: Artigo
Хэл сонгох:Inglês
Хэвлэсэн: MDPI AG 2023-09-01
Цуврал:Actuators
Нөхцлүүд:
Онлайн хандалт:https://www.mdpi.com/2076-0825/12/9/355
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