A Novel Analytical Formulation of SiC-MOSFET Losses to Size High-Efficiency Three-Phase Inverters
This paper presents a novel analytical loss formulation to predict the efficiency of three-phase inverters using silicon carbide (SiC) metal—oxide—semiconductor field-effect transistors (MOSFETs). The proposed analytical formulation accounts for the influence of the output current harmonic distortio...
שמור ב:
| Principais autores: | , , |
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| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
MDPI AG
2023-01-01
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| סדרה: | Energies |
| נושאים: | |
| גישה מקוונת: | https://www.mdpi.com/1996-1073/16/2/818 |
| תגים: |
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