An InGaAsSb Based 640 × 512 Focal Plane Array With Low Surface Leakage Current for Extended Shortwave Detection

An extended-wavelength InGaAsSb focal plane array (FPA) with a 15 μm pixel pitch, 640 × 512 format, and a cutoff wavelength of 3.22 μm is demonstrated. Through the atomic layer deposition Al₂O₃ passivation technology, the natural oxide leakage channel is re...

Täydet tiedot

Bibliografiset tiedot

Päätekijät:	Ruoyu Xie, Yifan Shan, Lingze Yao, Donghai Wu, Xiangbin Su, Hongyue Hao, Dongwei Jiang, Mengqi Yang, Ye Zhang, Hui Xie, Guowei Wang, Yingqiang Xu, Haiqiao Ni, Zhichuan Niu
Aineistotyyppi:	Artigo
Kieli:	Inglês
Julkaistu:	IEEE 2025-01-01
Sarja:	IEEE Photonics Journal
Aiheet:	ESWIR focal plane array InGaAsSb passivation
Linkit:	https://ieeexplore.ieee.org/document/11072720/
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