A Comparative Study of Single- and Dual-Threshold Voltage SRAM Cells
In this paper, a comparison has been drawn between 5 transistor (5T), 6T and 7T SRAM cells. All the cells have been designed using both single-threshold (conventional) and dual-threshold (dual-Vt) voltage techniques. Their respective delays and power consumption have been calculated at 180 nm and 6...
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| Autors principals: | , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
National Institute of Telecommunications
2023-06-01
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| Col·lecció: | Journal of Telecommunications and Information Technology |
| Matèries: | |
| Accés en línia: | https://jtit.pl/jtit/article/view/1196 |
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