Mitigation of Single Event Upset Effects in Nanosheet FET 6T SRAM Cell

The effects of single event upset (SEU) by alpha particles and heavy ions on the data flip of a 3 nm technology node gate-all-around (GAA) nanosheet field-effect transistor (NSFET) 6T static random-access memory (SRAM) cell was studied through technology computer-aided design (TCAD) simulations. It...

Descripció completa

Dades bibliogràfiques

Autors principals:	Minji Bang, Jonghyeon Ha, Minki Suh, Dabok Lee, Minsang Ryu, Jin-Woo Han, Hyunchul Sagong, Hojoon Lee, Jungsik Kim
Format:	Artigo
Idioma:	Inglês
Publicat:	IEEE 2024-01-01
Col·lecció:	IEEE Access
Matèries:	Gate-all-around (GAA) nanosheet field-effect transistor (NSFET) static random-access memory (SRAM) single event upset (SEU) technology computer-aided design (TCAD) simulation
Accés en línia:	https://ieeexplore.ieee.org/document/10676981/
Etiquetes:	Afegir etiqueta Sense etiquetes, Sigues el primer a etiquetar aquest registre!