A Comparative Study of Single- and Dual-Threshold Voltage SRAM Cells
In this paper, a comparison has been drawn between 5 transistor (5T), 6T and 7T SRAM cells. All the cells have been designed using both single-threshold (conventional) and dual-threshold (dual-Vt) voltage techniques. Their respective delays and power consumption have been calculated at 180 nm and 6...
Сохранить в:
| Главные авторы: | , |
|---|---|
| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
National Institute of Telecommunications
2023-06-01
|
| Серии: | Journal of Telecommunications and Information Technology |
| Предметы: | |
| Online-ссылка: | https://jtit.pl/jtit/article/view/1196 |
| Метки: |
Нет меток, Требуется 1-ая метка записи!
|