QR Code

Advanced GeSn/SiGeSn Group IV Heterostructure Lasers

Abstract Growth and characterization of advanced group IV semiconductor materials with CMOS‐compatible applications are demonstrated, both in photonics. The investigated GeSn/SiGeSn heterostructures combine direct bandgap GeSn active layers with indirect gap ternary SiGeSn claddings, a design proven...

Full description

Saved in:
Main Authors: Nils von den Driesch, Daniela Stange, Denis Rainko, Ivan Povstugar, Peter Zaumseil, Giovanni Capellini, Thomas Schröder, Thibaud Denneulin, Zoran Ikonic, Jean‐Michel Hartmann, Hans Sigg, Siegfried Mantl, Detlev Grützmacher, Dan Buca
Format: Artigo
Language:Inglês
Published: Wiley 2018-06-01
Series:Advanced Science
Subjects:
GeSn
heterostructures
lasers
multi‐quantum wells
SiGeSn
Online Access:https://doi.org/10.1002/advs.201700955
Tags: Add Tag
No Tags, Be the first to tag this record!

Similar Items